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Sputter cleaning and annealing of zinc-blende MnTe surface - XPS study

被引：22
作者：
Iwanowski, RJ
Heinonen, MH
Janik, E
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Turku Univ, Dept Phys, Mat Sci Lab, FIN-20014 Turku, Finland
来源：
APPLIED SURFACE SCIENCE | 2005年 / 249卷 / 1-4期
关键词：
X-ray photoelectron spectroscopy; single crystal surface; manganese telluride; ion bombardment; univalent manganese;
D O I：
10.1016/j.apsusc.2004.11.087
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper, being a complementary one to our earlier report (Chem. Phys. Lett. 387 (2004) 110), presents a detailed description of the surface cleaning method applied for molecular beam epitaxy (MBE)-grown zinc-blende (zb)-MnTe epilayers. In particular, surface compositional changes induced by multistep Ar+ ion sputtering (with beam energy, E-i, fixed between 0.5 and 2.0 keV) and subsequent annealing of zb-MnTe crystal have been studied by using X-ray photoelectron spectroscopy (XPS). It was found that Ar+ ion bombardment with E-i = 1.5 keV appeared as the crucial preparation step (either in multistep- or in post-anneal sputtering), which provided an efficient removal of the surface oxides and contaminants and led to nearly stoichiometric surface composition, namely [Tel/[Mn] = 0.97. Detailed analysis of the Mn 2p core-level spectrum (acquired in Mg K alpha mode) for clean zb-MnTe surface exhibited good consistency with the results of the relevant analysis reported earlier (see the reference above). (c) 2004 Elsevier B.V. All rights reserved.
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页码：222 / 230
页数：9
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