Arrangement of multiple structural units in a [0001] Σ49 tilt grain boundary in ZnO -: art. no. 064109

被引:29
作者
Sato, Y
Mizoguchi, T
Oba, F
Ikuhara, Y
Yamamoto, T
机构
[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778651, Japan
[2] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
[3] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
关键词
D O I
10.1103/PhysRevB.72.064109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Arrangement of structural units in a ZnO [0001] Sigma=49 symmetric tilt boundary was investigated using a combination of high-resolution electron microscopy and atomistic calculation in detail. The boundary is found to be described by the combination of two different dislocationlike structural units and a bulklike structural unit. The two dislocationlike units were very similar to structural units found in a Sigma=7 boundary. One of the dislocationlike units contains threefold-coordinated atoms and the other one has fivefold-coordinated atoms in contrast to fourfold coordination in ZnO bulk. Interestingly, the Sigma=49 boundary dominantly consists of a straight alternate array of dislocationlike units and a bulklike unit. A zigzag array of the units partly appeared, which can be related to the straight array via atom flipping at the boundary core. It is considered that the alternate array of dislocationlike units effectively relaxes local strain in the vicinity and, hence, minimizes the boundary energy.
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页数:7
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共 49 条
[1]  
Béré A, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.085330
[2]   Atomic structure of dislocation cores in GaN -: art. no. 205323 [J].
Béré, A ;
Serra, A .
PHYSICAL REVIEW B, 2002, 65 (20) :1-10
[3]   DISLOCATION STRUCTURE AND CONTRAST IN HIGH ANGLE GRAIN BOUNDARIES [J].
BISHOP, GH ;
CHALMERS, B .
PHILOSOPHICAL MAGAZINE, 1971, 24 (189) :515-&
[4]   A COINCIDENCE - LEDGE - DISLOCATION DESCRIPTION OF GRAIN BOUNDARIES [J].
BISHOP, GH ;
CHALMERS, B .
SCRIPTA METALLURGICA, 1968, 2 (02) :133-&
[5]   The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3 [J].
Browning, ND ;
Buban, JP ;
Moltaji, HO ;
Pennycook, SJ ;
Duscher, G ;
Johnson, KD ;
Rodrigues, RP ;
Dravid, VP .
APPLIED PHYSICS LETTERS, 1999, 74 (18) :2638-2640
[6]   Electronic properties of a grain boundary in Sb-doped ZnO [J].
Carlsson, JM ;
Hellsing, B ;
Domingos, HS ;
Bristowe, PD .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (44) :9937-9943
[7]   Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN [J].
Chen, J ;
Ruterana, P ;
Nouet, G .
PHYSICAL REVIEW B, 2003, 67 (20)
[8]   Atomic configurations and energetics of arsenic impurities in a silicon grain boundary [J].
Chisholm, MF ;
Maiti, A ;
Pennycook, SJ ;
Pantelides, ST .
PHYSICAL REVIEW LETTERS, 1998, 81 (01) :132-135
[9]  
Clarke DR, 1999, J AM CERAM SOC, V82, P485
[10]   THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J].
COWLEY, JM ;
MOODIE, AF .
ACTA CRYSTALLOGRAPHICA, 1957, 10 (10) :609-619