Silicon lifetime enhancement by SiNx:H anti-reflective coating deposed by PECVD using SiH4 and N2 reactive gas

被引：26

作者：

Bousbih, Rabaa ^{[1
]}

Dimassi, Wissem ^{[1
]}

Haddadi, Ikbel ^{[1
]}

Ben Slema, Sonia ^{[1
]}

Rava, Paolo ^{[1
]}

Ezzaouia, Hatem ^{[1
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

来源：

SOLAR ENERGY | 2012年 / 86卷 / 05期

关键词：

Hydrogenated silicon nitride; PECVD; SiH4-N-2; Anti-reflective coating; Passivation; CHEMICAL-VAPOR-DEPOSITION; NITRIDE FILMS; SOLAR-CELLS; OPTICAL-PROPERTIES; THIN-FILMS; PLASMA; BULK;

D O I：

10.1016/j.solener.2012.01.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogenated films of silicon nitride SiNx:H are largely used as antireflective coating as well as passivation layer for industrial crystalline and multicrystalline silicon solar cells. In this work, we present a low cost plasma enhanced chemical vapor deposition (PECVD) of this thin layer by using SiH4 and N-2 as a reactive gases. A study was carried out on the variation effect of the ratio silane (SiH4) to nitrogen (N-2) and time deposition on chemical composition, morphologies, reflectivity and carrier lifetime. The thickness was varied, in order to obtain a homogeneous antireflective layer. The Fourier transmission infrared spectroscopy (FTIR) shows the existence of Si-N and Si H bonds. The morphologies of the sample were studied by Atomic Force Microscopy (AFM). The resulting surface of the SiNx:H shows low-reflectivity less than 5% in wavelength range 400-1200 nm. As a result, an improvement in minority carrier lifetime has been achieved to about 15 mu s. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1300 / 1305

页数：6

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