PECVD GROWN SILICON-NITRIDE AR COATINGS ON POLYCRYSTALLINE SILICON SOLAR-CELLS

被引：27

作者：

KISHORE, R

SINGH, SN

DAS, BK

机构：

[1] Division of Materials, National Physical Laboratory, New Delhi, 110012, Dr. K.S., Krishnan Road

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 26卷 / 1-2期

关键词：

D O I：

10.1016/0927-0248(92)90123-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Silicon nitride films produced by plasma enhanced chemical vapor deposition (PECVD) have been studied as antireflection (AR) coating on polycrystalline silicon solar cells. A substantial enhancement (28%) in the short circuit current (I(sc)) has been obtained. The open circuit voltage (V(oc)) of these cells has also been found to improve after silicon nitride deposition. The deposition conditions to optimise the improvement in the cell performance have been discussed.

引用

页码：27 / 35

页数：9

共 16 条

[1]

BAERY W, 1983, P S SILICON NITRIDE, P476

[2]

BORN M., 1975, PRINCIPLES OPTICS

[3] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J].