Evidence for native-defect donors in n-type ZnO -: art. no. 225502

被引：449

作者：

Look, DC ^{[1
]}

Farlow, GC

Reunchan, P

Limpijumnong, S

Zhang, SB

Nordlund, K

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] Suranaree Univ Technol, Sch Phys, Nakhon Ratchasima, Thailand

[4] Natl Synchrotron Res Ctr, Nakhon Ratchasima, Thailand

[5] Natl Renewal Energy Lab, Golden, CO 80401 USA

[6] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.95.225502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent theory has found that native defects such as the O vacancy V-O and Zn interstitial Zn-I have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex Zn-I-N-O is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.

引用

页数：4

共 35 条

[1]

Agullo-Lopez F., 1988, POINT DEFECTS MAT

[2] Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO [J].

Aliev, GN ;

Bingham, SJ ;

Wolverson, D ;

Davies, JJ ;

Makino, H ;

Ko, HJ ;

Yao, T .

PHYSICAL REVIEW B, 2004, 70 (11) :115206-1

[3] Radiation hardness of ZnO at low temperatures [J].

Coskun, C ;

Look, DC ;

Farlow, GC ;

Sizelove, JR .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (06) :752-754

[4] Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J].

Cox, SFJ ;

Davis, EA ;

Cottrell, SP ;

King, PJC ;

Lord, JS ;

Gil, JM ;

Alberto, HV ;

Vilao, RC ;

Duarte, JP ;

de Campos, NA ;

Weidinger, A ;

Lichti, RL ;

Irvine, SJC .

PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2601-2604

[5]

ERHART P, IN PRESS

[6] Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance [J].

Gorelkinskii, YV ;

Watkins, GD .

PHYSICAL REVIEW B, 2004, 69 (11)

[7] Hydrogen: A relevant shallow donor in zinc oxide [J].

Hofmann, DM ;

Hofstaetter, A ;

Leiter, F ;

Zhou, HJ ;

Henecker, F ;

Meyer, BK ;

Orlinskii, SB ;

Schmidt, J ;

Baranov, PG .

PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4

[8] Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO [J].

Ip, K ;

Overberg, ME ;

Heo, YW ;

Norton, DP ;

Pearton, SJ ;

Stutz, CE ;

Luo, B ;

Ren, F ;

Look, DC ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (03) :385-387

[9] ELECTRON SPIN RESONANCE STUDIES OF DONORS AND ACCEPTORS IN ZNO [J].

KASAI, PH .

PHYSICAL REVIEW, 1963, 130 (03) :989-&

[10] First-principles study of native point defects in ZnO [J].

Kohan, AF ;

Ceder, G ;

Morgan, D ;

Van de Walle, CG .

PHYSICAL REVIEW B, 2000, 61 (22) :15019-15027

← 1 2 3 4 →