Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

被引：61

作者：

Kaul, AB ^{[1
]}

Whiteley, SR

Van Duzer, T

Yu, L

Newman, N

Rowell, JM

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Elect Res Lab, Berkeley, CA 94720 USA

[3] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[4] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

[5] Northwestern Univ, Mat Res Inst, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1337630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N-2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with similar to 13 m Omega cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values > 500 muV were observed up to 8.3 K, with I-c and R-n of magnitudes that are suitable for single-flux-quantum digital circuits. (C) 2001 American Institute of Physics.

引用

页码：99 / 101

页数：3

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