A 10 GHz digital amplifier in an ultra-small-spread high-Jc Nb/Al-AlOx/Nb integrated circuit process

被引:19
作者
Bhat, A [1 ]
Meng, XF
Whiteley, S
Jeffery, M
Van Duzer, T
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Elect Res Lab, Berkeley, CA 94720 USA
关键词
D O I
10.1109/77.783717
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a Josephson amplifier fabricated in a high-J(c) process, which is operational to speeds of at least 10 GHz, the highest reported for a voltage-state amplifier. The amplifier converts similar to 200 mu V digital signals to similar to 5 mV at 10 GHz and could be used as an interface between two superconducting systems. The bit-error-rate of the circuit was similar to 5 x 10(-12) at 5 GHz, the lowest reported; bit-error-rate measurements at 10 GHz were not possible. A high-J(c), process which was used to fabricate the amplifier was developed at UC Berkeley with extremely low I-c spreads; at similar to 9.4 kA/cm(2) sigma as low as 0.6% was observed. At similar to 10 kA/cm(2), the typical junction linear dimensions are 1.5 - 2 mu m, sizes for which it is not possible - with available tools - to make reliable vias that are smaller than the junction, We use a nonplanarized junction process, where the via for contact of a wiring layer to a junction can be larger than the junction.
引用
收藏
页码:3232 / 3235
页数:4
相关论文
共 13 条
[1]  
ABLESON L, 1995, IEEE T APPL SUPE JUN, V5, P2727
[2]   FABRICATION OF HIGH-QUALITY, DEEP-SUBMICRON NB/ALOX/NB JOSEPHSON-JUNCTIONS USING CHEMICAL-MECHANICAL POLISHING [J].
BAO, Z ;
BHUSHAN, M ;
HAN, SY ;
LUKENS, JE .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) :2731-2734
[3]   HIGH-SPEED SINGLE-FLUX QUANTUM CIRCUIT USING PLANARIZED NIOBIUM TRILAYER JOSEPHSON-JUNCTION TECHNOLOGY [J].
BUNYK, PI ;
OLIVA, A ;
SEMENOV, VK ;
BHUSHAN, M ;
LIKHAREV, KK ;
LUKENS, JE ;
KETCHEN, MB ;
MALLISON, WH .
APPLIED PHYSICS LETTERS, 1995, 66 (05) :646-648
[4]   A SUBMICROMETER NB/ALOX/NB JOSEPHSON JUNCTION [J].
IMAMURA, T ;
HASUO, S .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1586-1588
[5]   ELECTRICAL CHARACTERIZATION OF NB/AL-OXIDE/NB JOSEPHSON-JUNCTIONS WITH HIGH CRITICAL-CURRENT DENSITIES [J].
KLEINSASSER, AW ;
MALLISON, WH ;
MILLER, RE ;
ARNOLD, GB .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) :2735-2738
[6]   SUBGAP CHARACTERISTICS OF NB/ALOX/NB TUNNEL-JUNCTIONS WITH HIGH CRITICAL-CURRENT DENSITY [J].
MAEZAWA, M ;
AOYAGI, M ;
NAKAGAWA, H ;
KUROSAWA, I ;
TAKADA, S .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) :3073-3076
[7]   EFFECT OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF NB/AL-OXIDE/NB TUNNEL-JUNCTIONS [J].
MALLISON, WH ;
MILLER, RE ;
KLEINSASSER, AW .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) :2330-2333
[8]  
MENG X, 6 INT SUP EL C ISEC
[9]   CHARACTERISTICS OF HIGH CRITICAL-CURRENT DENSITY JOSEPHSON-JUNCTIONS WITH NB/ALOX/NB TRILAYERS [J].
SUGIYAMA, H ;
FUJIMAKI, A ;
HAYAKAWA, H .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) :2739-2742
[10]  
Suzuki H., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P290, DOI 10.1109/IEDM.1988.32814