EFFECT OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF NB/AL-OXIDE/NB TUNNEL-JUNCTIONS

被引：16

作者：

MALLISON, WH

MILLER, RE

KLEINSASSER, AW

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.403052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the dependence of the critical current density J(c) of Nb/AlOx/Nb Josephson tunnel junctions on substrate temperature T-s and oxygen exposure E (the product of oxidation time and pressure) during growth. For low O-2 exposures, J(c) depended sensitively on exposure, J(c) proportional to E(-1.6), independent of temperature for 77 K < T-s < 420 K. For high O-2 exposures, J(c) depended strongly on temperature, with a weaker dependence on exposure: For T-s = 290 K, J(c) proportional to E(-0.4), while for T-s = 77 K, J(c) was independent of exposure.

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页码：2330 / 2333

页数：4

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