ELECTRICAL CHARACTERIZATION OF NB/AL-OXIDE/NB JOSEPHSON-JUNCTIONS WITH HIGH CRITICAL-CURRENT DENSITIES

被引:16
作者
KLEINSASSER, AW
MALLISON, WH
MILLER, RE
ARNOLD, GB
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] UNIV NOTRE DAME,NOTRE DAME,IN 46556
关键词
D O I
10.1109/77.403156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transport in Nb/AlOx/Nb junctions involves two parallel channels, barrier defects (pinholes) with sub-nanometer dimensions and nearly-ideal tunneling regions. We fit junction characteristics using only a single parameter, the ratio of the normal state conductances of these current paths. Our barrier model accounts for the excellent Josephson behavior and highly non-ideal quasiparticle characteristics of junctions with critical current densities as high as 4 mA/mu m(2). It appears to be quite generally applicable to tunnel junctions.
引用
收藏
页码:2735 / 2738
页数:4
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