Kinetic simulation tools for nano-scale semiconductor devices

被引：7

作者：

Fedoseyev, A ^{[1
]}

Kolobov, V ^{[1
]}

Arslanbekov, R ^{[1
]}

Przekwas, A ^{[1
]}

机构：

[1] CFD Res Corp, Huntsville, AL 35805 USA

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 69卷 / 2-4期

关键词：

semiconductor devices; simulation tools; drift-diffusion; Boltzmann equation; Fokker-Planck equation;

D O I：

10.1016/S0167-9317(03)00349-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Kinetic simulation tools for design of nano devices based on deterministic solution of the classical Boltzmann equation with quantum corrections are described. We used two-term spherical harmonic expansion in velocity space, reducing the Boltzmann equation for electrons to a Fokker-Planck equation in a four-dimensional space (three spatial coordinates and energy). Details of the numerical implementation of the four-dimensional Fokker-Planck solver using kinetic and total energy domains are presented. The effect of quantum corrections on spatial distribution of carriers is taken into account. Simulation results for the nonlocal nonequilibrium electron transport, short submicron n+nn+ Si diode, quantum single barrier problem. and ultra-small "well tempered NMOSFET" are presented and compared with drift-diffusion, experimental and other author results. The numerical method employed is the finite volume technique with time-splitting factorization of spatial and energy space transport. (C) 2003 Elsevier B.V. All fights reserved.

引用

页码：577 / 586

页数：10