Air-stable ambipolar organic thin-film transistors based on an organic homostructure

被引：79

作者：

Ye, RB

Baba, M

Oishi, Y

Mori, K

Suzuki, K

机构：

[1] Iwate Ind Promot Ctr, Morioka, Iwate 0200852, Japan

[2] Iwate Univ, Fac Engn, Morioka, Iwate 0208551, Japan

[3] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 25期

关键词：

D O I：

10.1063/1.1949731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambipolar organic thin-film transistors (TFTs) based on a fluorinated copper phthalocyanine (F16CuPc)/copper phthalocyanine (CuPc) homostructure layer were fabricated and characterized. The homostructure TFTs showed typical air-stable ambipolar characteristics, with hole and electron mobilities of 1.44 x 10(-3) and 9.97 x 10(-4) cm(2)/V s, respectively, which are comparable to unipolar mobilities in these single-layer devices. X-ray diffraction analysis suggests highly ordered F16CuPc and CuPc polycrystalline thin films could be continuously grown via an intermediate-phase layer in the homostructure. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 21 条

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