A high-performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator

We have fabricated a high performance polycrystalline silicon (poly-Si) thin film transistor (TFT) with a silicon-nitride (SiNX) gate insulator using three stacked layers: very thin layer of hydrogenated amorphous silicon (a-Si:H), SiNX and laser annealed poly-Si. lifter patterning thin a-Si:H/SiNX layers, gate, and source/drain regions were ion-doped and then Ni layer were deposited, Such structure was annealed at 250 degrees C to form NiSi silicide phase. The low resistive NiSi silicides were introduced as gate/source/drain electrodes in order to reduce the process steps. The poly-Si with a grain size of 250 nm and low resistance n(+) poly-Si for ohlnic contact were introduced to have a high performance TFT. The fabricated poly-Si TFT exhibited a field effect mobility of 262 cm(2)/Vs and a threshold voltage of 1 V.