An infrared absorption investigation of hydrogen, deuterium, and nitrogen in ZnSe grown by molecular beam epitaxy

被引：10

作者：

Yu, ZH ^{[1
]}

Buczkowski, SL ^{[1
]}

Hirsch, LS ^{[1
]}

Myers, TH ^{[1
]}

机构：

[1] W VIRGINIA UNIV,DEPT PHYS,MORGANTOWN,WV 26506

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 11期

关键词：

D O I：

10.1063/1.363661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surprising concentrations of hydrogen and deuterium, as high as 5 x 10(20) cm(-3), were incorporated into nitrogen-doped ZnSe grown on GaAs by molecular beam epitaxy. Infrared absorption bands due to local vibration modes were observed at 3193 and 783 cm(-1) for ZnSe:N,H samples, and at 2368 cm(-1) for ZnSe:N,D samples using Fourier transform infrared spectroscopy. The isotopic shift in the absorption band agrees with predictions of a simple harmonic oscillator approximation for N-H bonding. The variation of the absorption band associated with substitutional nitrogen with nitrogen concentration indicates that not all nitrogen is substitutional, and also exhibited significant changes related to hydrogen incorporation. (C) 1996 American Institute of Physics.

引用

页码：6425 / 6428

页数：4

共 20 条

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