An introduction to deep submicron CMOS for vertex applications

被引：20

作者：

Campbell, M ^{[1
]}

Anelli, G ^{[1
]}

Cantatore, E ^{[1
]}

Faccio, F ^{[1
]}

Heijne, EHM ^{[1
]}

Jarron, P ^{[1
]}

Santiard, JC ^{[1
]}

Snoeys, W ^{[1
]}

Wyllie, K ^{[1
]}

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 473卷 / 1-2期

关键词：

CMOS; readout electronics; vertex detectors;

D O I：

10.1016/S0168-9002(01)01135-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：140 / 145

页数：6

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