Efficiency of photocarrier injection in a VO2/TiO2:Nb heterostructure

被引：19

作者：

Hiroi, Z ^{[1
]}

Yamauchi, T ^{[1
]}

Muraoka, Y ^{[1
]}

Muramatsu, T ^{[1
]}

Yamaura, JI ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2003年 / 72卷 / 12期

关键词：

photocarrier injection; heterostructure; transition metal oxides; VO2; TiO2;

D O I：

10.1143/JPSJ.72.3049

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The efficiency of photocarrier injection in a VO2/TiO2:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO2:Nb substrate are injected and accumulated in the VO2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10(9)-10(13) cm(-2) as a function of light irradiance. The maximum hole density of 9 x 10(18) cm(-3) is attained at a light irradiance of 133 mW/cm(2), which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.

引用

页码：3049 / 3052

页数：4

共 17 条

[1] FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].

AHN, CH ;

TRISCONE, JM ;

ARCHIBALD, N ;

DECROUX, M ;

HAMMOND, RH ;

GEBALLE, TH ;

FISCHER, O ;

BEASLEY, MR .

SCIENCE, 1995, 269 (5222) :373-376

[2] SMALL-POLARON VERSUS BAND CONDUCTION IN SOME TRANSITION-METAL OXIDES [J].

BOSMAN, AJ ;

VANDAAL, HJ .

ADVANCES IN PHYSICS, 1970, 19 (77) :1-&

[3] Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode [J].

Collins, CJ ;

Chowdhury, U ;

Wong, MM ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3754-3756

[4]

Jarzebski Z.M., 1973, OXIDE SEMICONDUCTORS

[5] Photocarrier injection effect on double exchange ferromagnetism in (La, Sr)MnO3/SrTiO3 heterostructure [J].

Katsu, H ;

Tanaka, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3245-3247

[6] Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb [J].

Koshihara, S ;

Oiwa, A ;

Hirasawa, M ;

Katsumoto, S ;

Iye, Y ;

Urano, C ;

Takagi, H ;

Munekata, H .

PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4617-4620

[7]

Milnes A. G., 1972, HETEROJUNCTIONS META

[8] OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].

MORIN, FJ .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36

[9]

MULLER KA, 1979, PHYS REV B, V19, P3593, DOI 10.1103/PhysRevB.19.3593

[10]

MURAMATSU T, IN PRESS J MAGN MAGN

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