Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys

被引：13

作者：

Kanaya, H ^{[1
]}

Yaguchi, H ^{[1
]}

Hijikata, Y ^{[1
]}

Yoshida, S ^{[1
]}

Miyoshi, S ^{[1
]}

Onabe, K ^{[1
]}

机构：

[1] Saitama Univ, Dept Elect & Elect Syst, Urawa, Saitama 3388570, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303430

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have determined the complex dielectric functions of GaP1-xNx alloys using spectroscopic ellipsometry to clarify the electronic structure. With increasing N concentration, the E-1-gap peak height for both epsilon(1) and epsilon(2) decreases and the E-1-gap energy shifts to higher energies, showing that the electronic state at the L point is considerably changed due to the N incorporation. In the lower energy range, a broad peak appears near the fundamental band gap energy of GaP. With increasing N concentration, this peak becomes broader and the peak height increases. This indicates that the band-edge formation in GaP1-xNx alloys is extremely unique compared to that in conventional semiconductor alloys. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2753 / 2756

页数：4

共 7 条

[1] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].

ADACHI, S .

PHYSICAL REVIEW B, 1987, 35 (14) :7454-7463

[2] Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys [J].

Bellaiche, L ;

Wei, SH ;

Zunger, A .

PHYSICAL REVIEW B, 1997, 56 (16) :10233-10240

[3] Evolution of the optical properties of III-V nitride alloys:: Direct band-to-band transitions in GaNyP1-y (0≤y≤0.029) -: art. no. 245207 [J].

Leibiger, G ;

Gottschalch, V ;

Schubert, M ;

Benndorf, G ;

Schwabe, R .

PHYSICAL REVIEW B, 2002, 65 (24) :1-6

[4] THE OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF CUBIC AND HEXAGONAL GAN FILMS BETWEEN 1.5-EV AND 10-EV [J].

LOGOTHETIDIS, S ;

PETALAS, J ;

CARDONA, M ;

MOUSTAKAS, TD .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :65-69

[5] METALORGANIC VAPOR-PHASE EPITAXY OF GAP1-XNX ALLOYS ON GAP [J].

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

ITO, R ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (25) :3506-3508

[6] Photoluminescence excitation spectroscopy of GaP1-xNx alloys: Conduction-band-edge formation by nitrogen incorporation [J].

Yaguchi, H ;

Miyoshi, S ;

Biwa, G ;

Kibune, M ;

Onabe, K ;

Shiraki, Y ;

Ito, R .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :353-356

[7] Control of structural defects in group III-V-N alloys grown on Si [J].

Yonezu, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (08) :762-768

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