Photoluminescence excitation spectroscopy of GaP1-xNx alloys: Conduction-band-edge formation by nitrogen incorporation

被引：55

作者：

Yaguchi, H ^{[1
]}

Miyoshi, S ^{[1
]}

Biwa, G ^{[1
]}

Kibune, M ^{[1
]}

Onabe, K ^{[1
]}

Shiraki, Y ^{[1
]}

Ito, R ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00592-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the conduction-band-edge formation in GaP1-xNx alloys by nitrogen incorporation into GaP using photoluminescence excitation (PLE) spectroscopy. The PLE spectra of GaP1-xNx alloys with various nitrogen concentrations show that the absorption edge shifts to lower energies with increasing nitrogen concentration. From the nitrogen concentration dependence of the absorption edge energy we found that the conduction-band-edge formation in GaP1-xNx alloys originates from the formation of the A line.

引用

页码：353 / 356

页数：4

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