Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse

被引：111

作者：

Chae, BG ^{[1
]}

Kim, HT ^{[1
]}

Youn, DH ^{[1
]}

Kang, KY ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2005年 / 369卷 / 1-4期

关键词：

VO2 thin film; metal-insulator transition; switching pulse; switching speed; strong correlation effect;

D O I：

10.1016/j.physb.2005.07.032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device material to transform efficiently from an insulator to a metal. The characteristics of the transformation were analyzed by considering both the delay time and rise time of the measured current response. The extrapolated switching time of the MIT decreased down to 9 ns as the external load resistance decreased to zero. Observation of the intrinsic switching time of the MIT in the correlated oxide films is impossible because of the inhomogeneity of the metallic and the insulating states. This indicates that the intrinsic switching time is in the order of less than a nanosecond. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：76 / 80

页数：5

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