Measurement of AC parameters of gallium arsenide (GaAs/Ge) solar cell by impedance spectroscopy

被引：31

作者：

Kumar, RA ^{[1
]}

Suresh, MS

Nagaraju, J

机构：

[1] ISRO, Satellite Ctr, Bangalore 560017, Karnataka, India

[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

关键词：

Capacitance measurement - Electric potential - Electric resistance measurement - Equivalent circuits - Semiconducting gallium arsenide - Spectroscopy;

D O I：

10.1109/16.944213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement of solar cell ac parameters is important for the design of efficient and reliable satellite power systems. In the present study, the ac parameters of Gallium Arsenide (GaAs/Ge) solar cell have been measured using impedance spectroscopy. The cell capacitance, dynamic resistance, and series resistance were measured. The results show that the transition capacitance (C-T) is dominant up to 0.9 V and beyond 0.9 V diffusion capacitance is significant.

引用

页码：2177 / 2179

页数：3