Multiple twins induced <110> preferred growth in TiN and SiC films prepared by CVD

被引：21

作者：

Cheng, HE

Lin, TT

Hon, MH

机构：

[1] Dept. of Mat. Sci. and Engineering, Natl. Cheng Kung University, Tainan

来源：

SCRIPTA MATERIALIA | 1996年 / 35卷 / 01期

关键词：

D O I：

10.1016/1359-6462(96)00091-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

[No abstract available]

引用

页码：113 / 116

页数：4

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