Influences of ambient gases on the emission characteristics of Nickel-deposited field emitters for vacuum microelectronics

被引:21
作者
Nagao, M
Matsubara, M
Inoue, K
Gotoh, Y
Tsuji, H
Ishikawa, J
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 10期
关键词
vacuum microelectronics; field emission; emission stability; F-N plot; cold cathode; flicker noise; S-K chart; noise power;
D O I
10.1143/JJAP.35.5479
中图分类号
O59 [应用物理学];
学科分类号
摘要
Influences of gases on the field emission characteristics of Ni-deposited field emitters were studied by introducing O-2, Ar and N-2 gases into a vacuum chamber. The extraction voltage depended both on the gas pressure and on the gas species. The observed noise, flicker noise and step-spike noise, was different among the gas species. For quantitative evaluations, noise power was calculated for flicker noise and the numbers of step-spike noise occurrences were counted. These quantitative evaluations allowed understanding of the origins of Bicker noise depending on the emission current. By analyzing surface states of emitter apices using the slope and intercept of the Fowler-Nordheim plot (Seppen-Katamuki (S-K) chart), influences of the gases on the emitter were clarified.
引用
收藏
页码:5479 / 5484
页数:6
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