Ultraviolet avalanche photodiode in CMOS technology

被引：13

作者：

Pauchard, A ^{[1
]}

Rochas, A ^{[1
]}

Randjelovic, Z ^{[1
]}

Besse, PA ^{[1
]}

Popovic, RS ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, EPFL, CH-1015 Lausanne, Switzerland

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n(well) regions separated by a gap of 0.6 mum. Our photodiodes achieve a very low dark current of only 400 pA/mm(2), an excess noise F = 7 for a mean gain <G > = 20 at lambda = 400nm, and a good gain uniformity.

引用

页码：709 / 712

页数：4

共 12 条

[1] Avalanche photodiode array in BiCMOS technology [J].

Biber, A ;

Seitz, P .

SENSORS, CAMERAS, AND SYSTEMS FOR SCIENTIFIC/INDUSTRIAL APPLICATIONS, 1999, 3649 :40-49

[2] CMOS compatible avalanche photodiodes [J].

Biber, A ;

Seitz, P .

ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS II, 1998, 3410 :10-20

[3]

BOSLAU O, 1990, SENSOR ACTUAT A-PHYS, V21, P570

[4]

HUFFMAN RE, 1993, SPIE OPTICAL ENG BEL, V80

[5] FLAME FAILURE-DETECTION AND MODERN BOILERS [J].

JONES, AR .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1988, 21 (10) :921-928

[6]

LI SS, 1993, SEMICONDUCTOR PHYSIC

[7] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[8] A silicon blue/UV selective stripe-shaped photodiode [J].

Pauchard, A ;

Besse, PA ;

Popovic, RS .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :172-177

[9]

Pauchard A, 2000, SERIES MICROSYSTEMS, V7

[10]

PAUCHARD A, 1999, P C TRANSD SEND JAP, P236

← 1 2 →