Physical limits of silicon transistors and circuits

被引:117
作者
Keyes, RW [1 ]
机构
[1] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1088/0034-4885/68/12/R01
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented.
引用
收藏
页码:2701 / 2746
页数:46
相关论文
共 124 条
[1]  
ANACKER W, 1977, SOID STATE PHYS I PH, V32, P39
[2]  
[Anonymous], 1998, Intel Technology Journal
[3]   THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1948, 74 (02) :230-231
[4]   PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1949, 75 (08) :1208-1225
[5]   PROJECTION ELECTRON-BEAM LITHOGRAPHY - A NEW APPROACH [J].
BERGER, SD ;
GIBSON, JM ;
CAMARDA, RM ;
FARROW, RC ;
HUGGINS, HA ;
KRAUS, JS ;
LIDDLE, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :2996-2999
[6]   Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices [J].
Bertrand, G ;
Deleonibus, S ;
Previtali, B ;
Guegan, G ;
Jehl, X ;
Sanquer, M ;
Balestra, F .
SOLID-STATE ELECTRONICS, 2004, 48 (04) :505-509
[7]  
BLODGETT AJ, 1983, SCI AM, V129, P48
[8]  
BOWDEN CM, 1981, OPTICAL BISTABILITY
[9]   A history of the invention of the transistor and where it will lead us [J].
Brinkman, WF ;
Haggan, DE ;
Troutman, WW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (12) :1858-1865
[10]   Iraqi military research: Rocket man [J].
Brumfiel, G .
NATURE, 2004, 431 (7009) :621-621