Reconstruction and chemical ordering at the surface of strained (In, Ga) As epilayers

被引：7

作者：

SauvageSimkin, M

Garreau, Y

Pinchaux, R

Cavanna, A

Veron, MB

Jedrecy, N

Landesman, JP

Nagle, J

机构：

[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[2] UNIV PARIS 06,F-75252 PARIS 05,FRANCE

[3] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00218-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An evidence for a cation chemical ordering in 2 x 3 reconstructed surfaces of strained InxGa1-xAs layers, locking the composition at the value In0.67Ga0.33As, has been obtained by grazing incidence X-ray diffraction. For lower surface concentrations, the reconstruction becomes incommensurate 2 x n and is described by introducing a random distribution of indium-free faults in the commensurate 2 x 3 phase. A quantitative account of the intensity distribution is obtained.

引用

页码：646 / 651

页数：6

共 7 条

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BELLAICHE L, UNPUB

[2] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].