INDIUM SURFACE SEGREGATION IN STRAINED GAINAS QUANTUM-WELLS GROWN ON GAAS BY MBE

被引：113

作者：

NAGLE, J

LANDESMAN, JP

LARIVE, M

MOTTET, C

BOIS, P

机构：

[1] Thomson-CSF, Laboratoire Central de Recherches

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90681-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface segregation of indium in strained Ga0.8In0.2As/GaAs quantum wells is studied by means of sequential MBE depositions controlled by reflection high energy electron diffraction (RHEED) observations, each followed by in-situ ultraviolet photoelectron spectroscopy (UPS) measurements. The amount of segregated In at the surface and the composition profiles at the interfaces are precisely determined and are found to be quantitatively described by a simple model of local equilibrium between the surface and subsurface layers. The measured profiles differ strongly from the intended square profiles and must be taken into account to correctly predict the position of the energy levels in such quantum wells. This is confirmed by photoluminescence (PL) measurements that show the expected energy shifts. We also demonstrate the possibility to improve the abruptness of the GaAs on GaInAs interface using short annealing steps to reevaporate the segregated In.

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页码：550 / 554

页数：5

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