共 21 条
- [1] ABEL F, IN PRESS
- [2] EFFECT OF TEMPERATURE ON THE GE/GAAS(110) INTERFACE FORMATION [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 505 - 512
- [3] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521
- [4] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1037 - 1039
- [6] MBE GROWTH OF GAAS AND III-V-ALLOYS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 293 - 297