THE FORMATION OF THEGA-INP(100) INTERFACE

被引：9

作者：

HOUZAY, F

BENSOUSSAN, M

GUILLE, C

BARTHE, F

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90956-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：617 / 621

页数：5

共 8 条

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[3]

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[4] ESCA STUDIES OF SOME A-IIIB-V COMPOUNDS WITH GA AND AS [J].

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[5]

MOISON JM, UNPUB SURFACE SCI

[6] THE ADSORPTION OF GA AND SB ON CLEAVED INP SURFACES [J].

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MCKINLEY, A ;

HUGHES, G ;

WILLIAMS, RH .

VACUUM, 1983, 33 (10-1) :597-600

[7] PHOTOEMISSION-STUDIES OF ROOM-TEMPERATURE OXIDIZED GA SURFACES [J].

SU, CY ;

SKEATH, PR ;

LINDAU, I ;

SPICER, WE .

SURFACE SCIENCE, 1982, 118 (1-2) :248-256

[8] METAL CONTACTS ON SEMICONDUCTORS - THE ADSORPTION OF SB, SN, AND GA ON INP(110) CLEAVED SURFACES [J].

WILLIAMS, RH ;

MCKINLEY, A ;

HUGHES, GJ ;

HUMPHREYS, TP ;

MAANI, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :561-568

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