THE ADSORPTION OF GA AND SB ON CLEAVED INP SURFACES

被引:33
作者
STRINGER, C
MCKINLEY, A
HUGHES, G
WILLIAMS, RH
机构
关键词
D O I
10.1016/0042-207X(83)90579-1
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:597 / 600
页数:4
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共 20 条
[1]   SURFACE-REACTIONS AND INTERDIFFUSION [J].
BACHRACH, RZ ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153
[2]   ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J].
BOLMONT, D ;
CHEN, P ;
PROIX, F ;
SEBENNE, CA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16) :3639-3648
[3]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[4]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[5]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[6]  
HUGHES G, 1983, J PHYS
[7]   STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE [J].
IHM, J ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1981, 47 (09) :679-682
[8]  
IHM J, 1982, J VAC SCI TECHNOL, V21, P230
[9]   INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J].
LUDEKE, R ;
LANDGREN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :667-673
[10]   CRYSTALLOGRAPHIC RELATIONSHIPS AND INTERFACIAL PROPERTIES OF AG ON GAAS(100) SURFACES [J].
LUDEKE, R ;
CHIANG, TC ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :599-606