STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE

被引：58

作者：

IHM, J

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.47.679

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：679 / 682

页数：4

共 22 条

[1] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[2] CHEMISORPTION OF OXYGEN AND ALUMINUM ON THE GAAS (110) SURFACE FROM ABINITIO THEORY
BARTON, JJ
SWARTS, CA
GODDARD, WA
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 164 - 168
[3] BARTON JJ, 1980, J VAC SCI TECHNOL, V17, P869
[4] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065
[6] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
CHADI, DJ
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163
[7] ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM
CHELIKOWSKY, JR
CHADI, DJ
COHEN, ML
[J]. PHYSICAL REVIEW B, 1981, 23 (08): : 4013 - 4022
[8] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 641 - 644
[9] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
DUKE, CB
PATON, A
MEYER, RJ
BRILLSON, LJ
KAHN, A
KANANI, D
CARELLI, J
YEH, JL
MARGARITONDO, G
KATNANI, AD
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443
[10] NORM-CONSERVING PSEUDOPOTENTIALS
HAMANN, DR
SCHLUTER, M
CHIANG, C
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1494 - 1497

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