CRYSTALLOGRAPHIC RELATIONSHIPS AND INTERFACIAL PROPERTIES OF AG ON GAAS(100) SURFACES

被引：75

作者：

LUDEKE, R ^{[1
]}

CHIANG, TC ^{[1
]}

EASTMAN, DE ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：599 / 606

页数：8

共 26 条

[1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[2] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[3] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[4] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
DERNIER, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332
[5] AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
EASTMAN, DE
DONELON, JJ
HIEN, NC
HIMPSEL, FJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2): : 327 - 336
[6] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL
FREEOUF, JL
WOODALL, JM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729
[7] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[8] MODEL FOR AUGER-ELECTRON SPECTROSCOPY OF SYSTEMS EXHIBITING LAYER GROWTH, AND ITS APPLICATION TO DEPOSITION OF SILVER ON NICKEL
JACKSON, DC
GALLON, TE
CHAMBERS, A
[J]. SURFACE SCIENCE, 1973, 36 (02) : 381 - 394
[9] AL-REACTIONS WITH GAAS (100) SURFACES
LANDGREN, G
LUDEKE, R
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 127 - 131
[10] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS
LINDAU, I
CHYE, PW
GARNER, CM
PIANETTA, P
SU, CY
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339

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