A band-structure model of strained quantum-well wurtzite semiconductors

被引：273

作者：

Chuang, SL

Chang, CS

机构：

[1] Dept. of Elec. and Comp. Engineering, Univ. Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 03期

关键词：

D O I：

10.1088/0268-1242/12/3/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical model for calculating the band structures of strained quantum-well wurtzite semiconductors. The theory is based on the Hamiltonian for wurtzite semiconductors and includes the strain effects on the shifts of the band edges. We show new results that include the matrix elements of the Hamiltonian using the finite-difference method for the calculations of the valence electronic band structures of GaN/AlxGa1-xN quantum-well wurtzite semiconductors based on the effective-mass theory.

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页码：252 / 263

页数：12

相关论文

共 42 条

[1] VALENCE-BAND MIXING EFFECTS ON THE GAIN AND THE REFRACTIVE-INDEX CHANGE OF QUANTUM-WELL LASERS [J].

AHN, D ;

CHUANG, SL ;

CHANG, YC .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4056-4064

[2] ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE [J].

AMANO, H ;

TANAKA, T ;

KUNII, Y ;

KATO, K ;

KIM, ST ;

AKASAKI, I .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1377-1379

[3]

Anderson E., 1995, LAPACK USERS GUIDE

[4] EXCITON MIXING IN QUANTUM WELLS [J].

BAUER, GEW ;

ANDO, T .

PHYSICAL REVIEW B, 1988, 38 (09) :6015-6030

[5]

Bir GL., 1974, Symmetry and Strain-Induced Effects in Semiconductors

[6] MODELING OF STRAINED-QUANTUM-WELL LASERS WITH SPIN-ORBIT-COUPLING [J].

CHANG, CS ;

CHUANG, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :218-229

[7] Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers [J].

Chichibu, S ;

Shikanai, A ;

Azuhata, T ;

Sota, T ;

Kuramata, A ;

Horino, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3766-3768

[8] ELECTRONIC-STRUCTURE OF ALN [J].

CHING, WY ;

HARMON, BN .

PHYSICAL REVIEW B, 1986, 34 (08) :5305-5308

[9] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].

CHRISTENSEN, NE ;

GORCZYCA, I .

PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415

[10] Optical gain of strained wurtzite GaN quantum-well lasers [J].

Chuang, SL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (10) :1791-1800

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