Observation of extended copper passivity in carbonate solutions and its future application in copper CMP

被引:8
作者
Ein-Eli, Y [1 ]
Abelev, E [1 ]
Auinat, M [1 ]
Starosvetsky, D [1 ]
机构
[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
关键词
D O I
10.1149/1.2096432
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In the present work we report on carbonate-based solutions, which can provide copper passivity in a wide potential range with the capability for producing protective characteristics similar to Al and W. This report focuses mainly on the identification of copper passivity parameters, such as potential range, anodic current limits, current characteristics, and rates of passivation and repassivation subsequent to mechanical damage of copper passivity in carbonate-based solutions. Copper is fully passivated in sulfate solutions containing potassium carbonate. The observed passivity is more pronounced in solutions containing higher carbonate content. On the contrary, increasing the sulfate concentration has the opposite effect on copper passivity than carbonate does. Friction of the passive film by repeated surface abrading resulted in a rapid repassivation of the mechanically activated surface sites. Thus, the use of a carbonate anion as a passivating component in a future chemical mechanical planarization (CMP) slurry design should be considered. (c) 2005 The Electrochemical Society.
引用
收藏
页码:B69 / B71
页数:3
相关论文
共 27 条
[11]   CONTACT AND VIA STRUCTURES WITH COPPER INTERCONNECTS FABRICATED USING DUAL DAMASCENE TECHNOLOGY [J].
LAKSHMINARAYANAN, S ;
STEIGERWALD, J ;
PRICE, DT ;
BOURGEOIS, M ;
CHOW, TP ;
GUTMANN, RJ ;
MURARKA, SP .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :307-309
[12]   Determining the effects of slurry surfactant, abrasive size, and abrasive content on the tribology and kinetics of copper CMP [J].
Li, Z ;
Ina, K ;
Lefevre, P ;
Koshiyama, I ;
Philipossian, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (04) :G299-G304
[13]  
LUI R, 1999, SOLID STATE ELECT, V43, P1003
[14]  
MACDONALD DD, 1966, J ELECTROCHEM SOC, V121, P208
[15]   In situ STM study of the initial stages of oxidation of Cu(111) in aqueous solution [J].
Maurice, V ;
Strehblow, HH ;
Marcus, P .
SURFACE SCIENCE, 2000, 458 (1-3) :185-194
[16]   A model of copper CMP [J].
Paul, E ;
Kaufman, F ;
Brusic, V ;
Zhang, J ;
Sun, F ;
Vacassy, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (04) :G322-G328
[17]  
PEREZSANCHEZ M, 1990, ELECTROCHIM ACTA, V35, P1337
[18]  
Pourbaix M., 1966, ATLAS ELECTROCHEMICA
[19]  
SHINN GB, 2000, HDB SEMICONDUCTOR MA, P415
[20]  
Singer P., 1998, Semiconductor International, V21, P90