Picosecond surface-emitting semiconductor laser with >200 mW average power

被引:30
作者
Häring, R
Paschotta, R
Gini, E
Morier-Genoud, F
Martin, D
Melchior, H
Keller, U
机构
[1] ETH Honggerberg HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1049/el:20010546
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A passively modelocked diode-pumped surface-emitting semiconductor laser at 950nm with a 2GHz repetition rate is reported. Compared to the first device of this kind, which the authors recently reported, a greatly improved average output power of 213mW and a reduced pulse duration of 3.2ps are achieved. The device consists of an optically pumped semiconductor gain structure and a semiconductor saturable absorber mirror (SESAM) in an external cavity.
引用
收藏
页码:766 / 767
页数:2
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