Simple method for resist critical dimension prediction

被引：3

作者：

Nakao, S ^{[1
]}

Mastubara, H ^{[1
]}

Yamaguchi, A ^{[1
]}

Sakai, J ^{[1
]}

Nakae, A ^{[1
]}

Tatsu, S ^{[1
]}

Tsujita, K ^{[1
]}

Wakamiya, W ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, ULSI Dev Ctr, Itami, Hyogo 6644316, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12B期

关键词：

development model; photo lithography; CD prediction; computer simulation;

D O I：

10.1143/JJAP.37.6855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple calculation method which predicts resist critical dimension (CD) with high precision is proposed. To simplify the formalism, the image intensity profile and dissolution rate variation of the resist are approximated with a linear and an exponential function, respectively. And the three step development approximation, in which development is assumed to proceed only vertically in the first step, only horizontally with a varying development rate in the second step and also horizontally with a constant rate in the third step, is adopted. With these simplifications, the resist edge displacement is expressed with a primitive formula. This method is examined by comparing the experimental and calculated results, confirming the effectiveness of the method.

引用

页码：6855 / 6862

页数：8

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