Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy

被引：25

作者：

Daudin, B

Feuillet, G

Mariette, H

Mula, G

Pelekanos, N

Molva, E

Rouvière, JL

Adelmann, C

Martinez-Guerrero, E

Barjon, J

Chabuel, F

Bataillou, B

Simon, J

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2M Phys Semicond, F-38041 Grenoble, France

[2] Univ Grenoble 1, Spectrometrie Phys Lab, F-38041 Grenoble, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 3B期

关键词：

III-V nitrides; molecular beam epitaxy; quantum dots; Stranski-Krastanov growth mode; localization;

D O I：

10.1143/JJAP.40.1892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that under specific growth conditions the strain relaxation of GaN deposited on AIN obeys the Stranski-Krastanov mechanism. As a consequence. it is demonstrated that. for both cubic and hexagonal phases, the growth of self-organized three-dimensional islands can be achieved. These islands behave as quantum dots. exhibiting optical properties dominated by localization effects.

引用

页码：1892 / 1895

页数：4

共 10 条

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