Growth mode and kinetics of atmospheric pressure chemical vapour deposition of β-SiC on Si(100) substrate

We have studied the epitaxial growth of beta-SiC on Si (100) substrates by atmospheric chemical vapour deposition with silane anti propane. A three dimensionnal growth mode has been evidenced at 1350 degrees C, resulting in the formation of a high density of dislocations near the interface. However, the crystallinity improves when the layer get thicker by the meeting of theses dislocations. The study of the growth kinetics at short and long growth time has shown that it is influenced by the thickness of the layer. We propose an explanation of this feature by taking into account the evolution of the crystallinity with the thickness.