The effect of strain on the formation of dislocations at the SiGe/Si interface

被引：63

作者：

LeGoues, FK

机构：

[1] IBM CORP,UTIL MKT UNIT,YORKTOWN HTS,NY 10598

[2] IBM CORP,MICROSTRUCT MAT GRP,YORKTOWN HTS,NY 10598

来源：

MRS BULLETIN | 1996年 / 21卷 / 04期

关键词：

D O I：

10.1557/S0883769400035326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：38 / 44

页数：7

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