Photo- and dark current noise in a-Si:H pin diodes at forward and reverse bias

被引：5

作者：

Blecher, F ^{[1
]}

Seibel, K ^{[1
]}

Böhm, M ^{[1
]}

机构：

[1] Univ Gesamthsch Siegen, Inst Halbleitertech, D-57068 Siegen, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

引用

页码：175 / 180

页数：6

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