Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge -: art. no. 112904

被引：51

作者：

Spiga, S ^{[1
]}

Wiemer, C ^{[1
]}

Tallarida, G ^{[1
]}

Scarel, G ^{[1
]}

Ferrari, S ^{[1
]}

Seguini, G ^{[1
]}

Fanciulli, M ^{[1
]}

机构：

[1] INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 11期

关键词：

D O I：

10.1063/1.2042631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O-3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C-V) characteristics. Films grown using O-3 are good insulators and exhibit well-shaped C-V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O-3 leads to the formation of a 2 nm thick layer, possibly GeOx, at the HfO2/Ge interface. (c) 2005 American Institute of Physics.

引用

页数：3

共 17 条

[1] Energy band alignment at the (100)Ge/HfO2 interface [J].