Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes

被引：7

作者：

Martins, RFP ^{[1
]}

Fortunato, EMC ^{[1
]}

机构：

[1] CEMOP, CTR EXCELLENCE MICROELECT & OPTOELECT PROC, P-2825 MONTE DE CAPARICA, PORTUGAL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices, From this, an equivalent electric circuit is derived and the predicted values are compared,vith the experimental results obtained in 1-D TFPSD devices, with different sizes, The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device.

引用

页码：2143 / 2152

页数：10

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