Probing physical properties at the nanoscale

被引:20
作者
Brukman, Matthew J. [1 ]
Bonnell, Dawn A. [1 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2947647
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Everyday devices ranging from computers and cell phones to the LEDs inside traffic lights exploit quantum mechanics and rely on precisely controlled structures and materials to function optimally. Indeed, the goal in device fabrication is to control the structure and composition of materials, often at the atomic scale, and thereby fine-tune their properties in the service of ever-more-sophisticated technology. Researchers have imaged the structures of materials at atomic scales for nearly half a century, often using electrons, x rays, or atoms on sharp tips (see the article by Tien Tsong in PHYSICS TODAY, March 2006, page 31). The ability to survey properties of the materials has proven more challenging. © 2008 American Institute of Physics.
引用
收藏
页码:36 / 42
页数:7
相关论文
共 12 条
[11]   Local impedance imaging and spectroscopy of polycrystalline ZnO using contact atomic force microscopy [J].
Shao, R ;
Kalinin, SV ;
Bonnell, DA .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1869-1871
[12]   Scanned probe imaging of single-electron charge states in nanotube quantum dots [J].
Woodside, MT ;
McEuen, PL .
SCIENCE, 2002, 296 (5570) :1098-1101