Grain boundary loops in graphene

被引：140

作者：

Cockayne, Eric ^{[1
]}

Rutter, Gregory M. ^{[2
,3
]}

Guisinger, Nathan P. ^{[3
]}

Crain, Jason N. ^{[3
]}

First, Phillip N. ^{[2
]}

Stroscio, Joseph A. ^{[3
]}

机构：

[1] NIST, Div Ceram, Gaithersburg, MD 20899 USA

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[3] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 19期

关键词：

DEFECTS; SCATTERING; GRAPHITE;

D O I：

10.1103/PhysRevB.83.195425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy or interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a "flower" pattern in scanning tunneling microscopy studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.

引用

页数：7

共 41 条

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