Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

被引：15

作者：

Liu, PC ^{[1
]}

Hou, CY ^{[1
]}

Wu, YCS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2005年 / 478卷 / 1-2期

关键词：

wafer bonding; light-emitting diodes; LEDs; indium tin oxide; electrical resistance;

D O I：

10.1016/j.tsf.2004.11.070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 degrees C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：280 / 285

页数：6

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