Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum - Measurements by the four-probe method and by Kelvin force microscopy

被引：73

作者：

Olivier, J ^{[1
]}

Servet, B ^{[1
]}

Vergnolle, M ^{[1
]}

Mosca, M ^{[1
]}

Garry, G ^{[1
]}

机构：

[1] Thomson CSF, LCR, F-91404 Orsay, France

来源：

SYNTHETIC METALS | 2001年 / 122卷 / 01期

关键词：

OLED; pulsed laser deposition; Kelvin force microscopy; work function;

D O I：

10.1016/S0379-6779(00)01337-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study shows that, after W-irradiation in air or vacuum, conductivity and work function of ITO and In2O3 come back to their initial values in a few hours or minutes. In addition to this instability, one of the reported drawbacks of ITO is the indium diffusion into the organic layers of operating LED, leading to performance degradation. So, we have reconsidered ITO as transparent anode and explored alternatives such as NiO. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：87 / 89

页数：3

相关论文

共 8 条

[1] Effect of a plasma treatment of ITO on the performance of organic electroluminescent devices [J].

Furukawa, K ;

Terasaka, Y ;

Ueda, H ;

Matsumura, M .

SYNTHETIC METALS, 1997, 91 (1-3) :99-101

[2] Metal diffusion from electrodes in organic light-emitting diodes [J].

Lee, ST ;

Gao, ZQ ;

Hung, LS .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1404-1406

[3] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].

Mason, MG ;

Hung, LS ;

Tang, CW ;

Lee, ST ;

Wong, KW ;

Wang, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692

[4]

Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397

[5] Work function modification of indium-tin-oxide used in organic light emitting devices [J].

Tadayyon, SM ;

Griffiths, K ;

Norton, PR ;

Tripp, C ;

Popovic, Z .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1773-1778

[6] Metal oxides as a hole-injecting layer for an organic electroluminescent device [J].

Tokito, S ;

Noda, K ;

Taga, Y .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (11) :2750-2753

[7] Charge injection into porous silicon electroluminescent devices [J].

Wakefield, G ;

Dobson, PJ ;

Hutchison, JL ;

Foo, YY .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3) :141-145

[8] The fabrication and characterization of nickel oxide films and their application as contacts to polymer/porous silicon electroluminescent devices [J].

Wakefield, G ;

Dobson, PJ ;

Foo, YY ;

Loni, A ;

Simons, A ;

Hutchison, JL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) :1304-1309