Inversion asymmetry in heterostructures of zinc-blende semiconductors: Interface and external potential versus bulk effects

被引：79

作者：

Krebs, O ^{[1
]}

Rondi, D

Gentner, JL

Goldstein, L

Voisin, P

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France

[2] Thomson CSF, Cent Rech Lab, F-91400 Orsay, France

[3] Alcatel Alsthom Rech, Route Nozay, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.80.5770

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The direct observation of electric-field-induced optical anisotropy in InGaAs-InP quantum wells is reported. The analysis of this effect shows that hitherto neglected heavy- and light-hole couplings at the minizone center due to interface and external potential inversion asymmetries play a much stronger role than the classical bulk inversion asymmetry. The giant electropleochroism previously reported by Kwok et al. is quantitatively explained. [S0031 -9007(98)06420-5].

引用

页码：5770 / 5773

页数：4

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