Stacking faults and phase transformations in silicon nitride

被引：7

作者：

Milhet, X ^{[1
]}

Demenet, JL ^{[1
]}

Rabier, J ^{[1
]}

机构：

[1] Univ Poitiers, UFR Sci, CNRS,URA 6630, Met Phys Lab,SP2MI, F-86960 Futuroscope, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1998年 / 4卷 / 02期

关键词：

D O I：

10.1051/epjap:1998254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

From observations of extended dislocation nodes in beta silicon nitride, possible stacking fault structures in the basal plane of this compound have been investigated. It has been found that stacking fault structure is locally analogous to alpha silicon nitride. A phase transformation alpha to beta or beta to alpha can also be achieved by cooperative shear of partial dislocations with 1/3[1 (1) over bar 00] Burgers vectors.

引用

页码：149 / 156

页数：8

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