Future directions for DRAM memory cell technology

被引：46

作者：

Nitayama, A ^{[1
]}

Kohyama, Y ^{[1
]}

Hieda, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film is available. The BST film development is a key to realize giga bit era DRAM by using BST cell.

引用

页码：355 / 358

页数：4

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[2]

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INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :265-268

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