The effects of metal-doped GeSbTe films on light scattering-mode super-resolution near-field structure (Super-RENS)

被引：25

作者：

Men, L

Tominaga, J

Fuji, H

Kikukawa, T

Atoda, N

机构：

[1] Natl Inst Adv Interdisciplinary Res, Adv Opt Memory Grp, Tsukuba, Ibaraki 3058562, Japan

[2] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

[3] TDK Corp, Data Storage Technol Ctr, Elemental Technol Dev, Nagano 3850009, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3B期

关键词：

near-field optical data storage; super-resolution; light scattering-mode super-resolution near-field structure; GeSbTe; silver oxide (AgOx);

D O I：

10.1143/JJAP.40.1629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical, thermal kinetics and dynamic characteristics of disks comprising iron (Fe), zinc (Zn) or bismuth (Bi) doped GeSbTe recording films were investigated. The optical constants n and k were decreased when using Fe and Zn doped recording films, while Bi doped GeSbTe recording films yielded a reduced n value and enhanced k value. Crystallization temperature T-c and crystallization activation energy E-a of metal-doped GeSbTe films depended on specimen structures and doping metals, It was found that the readout durability in light scattering-mode super-resolution structure (LSC super-RENS) could be improved greatly by using Fe, Zn doped recording films.

引用

页码：1629 / 1633

页数：5

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