Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

被引：48

作者：

Gu, Q. L. ^{[1
]}

Cheung, C. K. ^{[1
]}

Ling, C. C. ^{[1
]}

Ng, A. M. C. ^{[1
]}

Djurisic, A. B. ^{[1
]}

Lu, L. W. ^{[1
]}

Chen, X. D. ^{[1
]}

Fung, S. ^{[1
]}

Beling, C. D. ^{[1
]}

Ong, H. C. ^{[2
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 09期

关键词：

D O I：

10.1063/1.2912827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Au contacts were deposited on n-type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2O2 pretreatment were Ohmic and those with H2O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of similar to 10(-7) A cm(-2). A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature. (C) 2008 American Institute of Physics.

引用

页数：8

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