Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact

被引：65

作者：

Gu, Q. L.

Ling, C. C.

Chen, X. D.

Cheng, C. K.

Ng, A. M. C.

Beling, C. D.

Fung, S.

Djurisic, A. B.

Lu, L. W.

Brauer, G.

Ong, H. C.

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[3] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.2715025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2O2 treatment did not affect the carbon surface contamination or the E-C-0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects. (c) 2007 American Institute of Physics.

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页数：3

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